MMBT4401LT3G Bipolar (BJT) Single Transistor, NPN

MMBT4401LT3G is a NPN silicon, switching transistor.

• Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0)
• Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
• Emitter-base breakdown voltage is 6.0VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
• Collector current – continuous is 600mAdc max (TA = 25°C)
• Collector current – peak is 900mAdc max (TA = 25°C)
• Total Device Dissipation FR-5 Board is 225mW max (TA = 25°C)
• Thermal resistance junction-to-ambient is 556°C/W max (TA = 25°C)
• Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
• SOT-23 package
• Junction temperature range from -55 to +150°C